BRAND | Infineon |
Product | BSM50GX120DN2 |
Description | IGBT Modules |
Internal code | ONR4356305 |
Technical specification | Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 78 A Gate-Emitter Leakage Current: 200 nA Pd - Power Dissipation: 400 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C |
Discover the superior quality and performance of the Infineon BSM50GX120DN2 with Onrion LLC in Argentina . Whether you are looking for reliability or efficiency, this product meets all your industrial needs.
The BSM50GX120DN2 is designed to provide optimal performance and durability in various applications. Known for its high-quality construction and innovative features, it is a preferred choice for professionals.
Key Features of BSM50GX120DN2 :
At Onrion LLC , we offer the BSM50GX120DN2 at competitive prices and with the fastest delivery times across Argentina . Our expert team is ready to assist you with all your inquiries and provide tailored solutions to meet your specific needs.
Why Choose Onrion LLC ?
Get Your Quote Today! Ready to enhance your operations with the BSM50GX120DN2 ? Contact us now for a personalized quote. Fill out the form below or send us an email with your inquiry. Let us help you make a cost-effective, quality-driven choice for your business.
Important Notice: While we supply Infineon products, Onrion LLC is not an authorized distributor. All rights are reserved by the manufacturers and their official partners.
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